HPND-4028 Datasheet, Diodes, HP

HPND-4028 Features

• Diodes
• Low Capacitance 0.025 pF Maximum at 1 MHz Guaranteed Min./Max.
• Fast Switching 2.0 nsec
• Low Resistance at Low Bias 1.5 Ω at IF = 10 mA (Typical)
• R

PDF File Details

Part number:

HPND-4028

Manufacturer:

HP

File Size:

62.16kb

Download:

📄 Datasheet

Description:

Beam lead pin diodes. The HPND-4018, 4028, and 4038 beam lead PIN diodes are designed for low capacitance, low resistance, and fast switching at microwave

HPND-4028 Application

• Applications Rugged construction and strong beams ensure high assembly yields while nitride passivation and polyimide coating ensure reliability. S

TAGS

HPND-4028

HP

📁 Related Datasheet

HPND-4028 - Beam Lead PIN Diodes (AVAGO)
HPND-4028, HPND-4038 Beam Lead PIN Diodes for Phased Arrays and Switches Data Sheet Description The HPND-4028 and 4038 beam lead PIN diodes are ­desi.

HPND-4005 - Beam Lead PIN Diode (HP)
Beam Lead PIN Diode Technical Data HPND-4005 Features • High Breakdown Voltage 120 V Typical • Low Capacitance 0.017 pF Typical • Low Resistance 4.7.

HPND-4018 - Beam Lead PIN Diodes (HP)
Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4018 HPND-4028 HPND-4038 Features • Low Capacitance 0.025 pF Maximum at 1 MH.

HPND-4038 - Beam Lead PIN Diodes (HP)
Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4018 HPND-4028 HPND-4038 Features • Low Capacitance 0.025 pF Maximum at 1 MH.

HPND-4038 - Beam Lead PIN Diodes (AVAGO)
HPND-4028, HPND-4038 Beam Lead PIN Diodes for Phased Arrays and Switches Data Sheet Description The HPND-4028 and 4038 beam lead PIN diodes are ­desi.

HPN2222A - NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6118 Issued Date : 1992.10.23 Revised Date : 2002.04.15 Page No. : 1/4 HPN2222A NPN EPITAXIAL PLA.

HPN2369A - NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6106 Issued Date : 1992.09.22 Revised Date : 2001.09.20 Page No. : 1/4 HPN2369A NPN EPITAXIAL PLAN.

HPN2907A - PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6105 Issued Date : 1992.09.09 Revised Date : 2002.04.15 Page No. : 1/4 HPN2907A PNP EPITAXIAL PLAN.

HPN800R1K4PD-G - Silicon N-Channel Power MOSFET (CR Micro)
Silicon N-Channel Power MOSFET ○R HPN800R1K4PD-G General Description： HPN800R1K4PD-G, the silicon N-channel Enhanced MOSFETs, is obtained by the su.

HP-202 - Photo diodes (KODENSHI KOREA CORP)
Photo diodes K O D E N S H I HP-202 DIMENSIONS The HP-202 is a high-output, high-speed silicon photodiode, mounted in durable hermetically sealed TO.