20N681K
HUAAN
312.66kb
Metal oxide varistor. of Part Number VDR - 20 M/E/N 471 K Brand Mark Varistor Voltage Tolerance: K= ±10% Nominal Varistor Voltage: 471=470V DIFFERENT INTER
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📁 Related Datasheet
20N681K - (20NxxxK) Metal Oxide Varistor
(RFE)
..
METAL OXIDE VARISTOR 20mm Disc
Part Number Maximum Allowable Voltage ACrms DC (V) (V) 11 14 14 18 17 22 20 26 25 31 30 38 35 45 4.
20N681K - (20NxxxK) Metal Oxide Varistor Curves
(RFE)
..
METAL OXIDE VARISTOR Transient V-I Characteristics Curves
20mm V-I CHARACTERISTIC CURVE (for standard MOVs)
3000 2000
Max Leakage.
20N680K - Metal Oxide Varistor
(HUAAN)
TMOV 20M(E,N)Series
Metal Oxide Varistors Data Sheet
Features
·TMOV integrated thermal protection device ·High peak surge current rating up to 10KA ·D.
20N60 - 20A 600V N-channel Enhancement Mode Power MOSFET
(ROUM)
20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These silicon N-channel Enhanced VDMOSFETs are obtained by the sel.
20N60 - IGBT
(IXYS)
Low VCE(sat) IGBT High speed IGBT
IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A
VCES 600 V 600 V
IC25 40 A 40 A
VCE(sat) 2.5 V 3.0 V
Symbol
Test Conditions.
20N60 - 600V N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 20N60
20A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 20N60 is an N-channel enhancement mode power MOSFET using .
20N60 - N-Channel MOSFET
(VBsemi)
20N60-VB
20N60-VB Datasheet
N-Channel 650 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) at 25 °C Qg max. (nC) Qgs (.
20N60 - N-Channel MOSFET
(ON Semiconductor)
MOSFET – N-Channel, SuperFET)
600 V, 20 A, 190 mW
FCP20N60, FCPF20N60
Description SuperFET MOSFET is onsemi’s first generation of high voltage
super−j.
20N60A - IGBT
(IXYS)
Low VCE(sat) IGBT High speed IGBT
IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A
VCES 600 V 600 V
IC25 40 A 40 A
VCE(sat) 2.5 V 3.0 V
Symbol
Test Conditions.
20N60A - N-channel MOSFET
(JieJie)
Description
JMP N-channel MOSFET
Features
600V,20A RDS(ON) = 0.3Ω (Typ.) @ VGS = 10V, ID =10A Fast Switching Improved dv/dt Capability 100% .
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