CS3N80FA9 Silicon N-Channel Power MOSFET

HUAJING MICROELECTRONICS

Description

Silicon N-Channel Power MOSFET ○R CS3N80F A9 General .
VDSS 800 CS3N80F A9, the silicon N-channel Enhanced VDMOSFETs, ID 3 is obtained by the self-aligned planar Technology which reduce PD(TC=25℃) 3.

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Datasheet Specifications

Part number: CS3N80FA9
Manufacturer: HUAJING MICROELECTRONICS
File Size: 827.56 KB
Datasheet: CS3N80FA9-HUAJINGMICROELECTRONICS.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Volt

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CS3N80FA9 Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

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