CS3N80FA9 Datasheet - HUAJING MICROELECTRONICS

CS3N80FA9 Silicon N-Channel Power MOSFET

VDSS 800 CS3N80F A9, the silicon N-channel Enhanced VDMOSFETs, ID 3 is obtained by the self-aligned planar Technology which reduce PD(TC=25℃) 30 the conduction loss, improve switching performance and RDS(ON)Typ 4.0 enhance the avalanche energy. The transistor can be used in various power.

CS3N80FA9 Features

* l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data:18nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Pa

CS3N80FA9 Datasheet (827.56 KB)