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CS3N80FA9

Silicon N-Channel Power MOSFET

CS3N80FA9 Features

* l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data:18nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Pa

CS3N80FA9 General Description

VDSS 800 CS3N80F A9, the silicon N-channel Enhanced VDMOSFETs, ID 3 is obtained by the self-aligned planar Technology which reduce PD(TC=25℃) 30 the conduction loss, improve switching performance and RDS(ON)Typ 4.0 enhance the avalanche energy. The transistor can be used in various power.

CS3N80FA9 Datasheet (827.56 KB)

Preview of CS3N80FA9 PDF

Datasheet Details

Part number:

CS3N80FA9

Manufacturer:

HUAJING MICROELECTRONICS

File Size:

827.56 KB

Description:

Silicon n-channel power mosfet.

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CS3N80FA9 Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

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