CS3N80A4RZ-G Datasheet - CR Micro

CS3N80A4RZ-G Silicon N-Channel Power MOSFET

CS3N80 A4RZ-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization.

CS3N80A4RZ-G Features

* Fast Switching

* Low ON Resistance(Rdson≤4.8Ω)

* Low Gate Charge (Typical Data: 17.3nC)

* Low Reverse transfer capacitances(Typical: 4.3pF)

* 100% Single Pulse avalanche energy Test

* Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（T

CS3N80A4RZ-G-CRMicro.pdf