CS3N80A3H1-G - Silicon N-Channel Power MOSFET
CS3N80 A3H1-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization a
CS3N80A3H1-G Features
* Fast Switching
* Low ON Resistance(Rdson≤4.8Ω)
* Low Gate Charge (Typical Data:18nC)
* Low Reverse transfer capacitances(Typical:7pF)
* 100% Single Pulse avalanche energy Test
* Halogen Free Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc
