CS3N80A3H1-G Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET ○R CS3N80 A3H1-G General .
CS3N80 A3H1-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve.

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Datasheet Specifications

Part number: CS3N80A3H1-G
Manufacturer: CR Micro
File Size: 773.60 KB
Datasheet: CS3N80A3H1-G-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤4.8Ω)
* Low Gate Charge (Typical Data:18nC)
* Low Reverse transfer capacitances(Typical:7pF)
* 100% Single Pulse avalanche energy Test

Applications

* Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Sourc

CS3N80A3H1-G Distributors

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CS3N80A3 CS3N80A4 CS3N80A8 CS3N80ARH CS3N80FA9 CS3N20ATH

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CS3N80A3H1-G Silicon N-Channel Power MOSFET CR Micro

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