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CS3N80A3 Datasheet - Huajing Microelectronics

CS3N80A3 Silicon N-Channel Power MOSFET

CS3N80 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 800 3 75 4.0 the avalanche energy. The transistor can be used in various power switchi.

CS3N80A3 Features

* l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data:18nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Pa

CS3N80A3-HuajingMicroelectronics.pdf

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Datasheet Details

Part number:

CS3N80A3

Manufacturer:

Huajing Microelectronics

File Size:

717.84 KB

Description:

Silicon n-channel power mosfet.

CS3N80A3 Distributor

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CS3N80A3 CS3N80A3 Silicon N-Channel Power MOSFET Huajing Microelectronics