CS3N80FA9 - Silicon N-Channel Power MOSFET

HUAJING MICROELECTRONICS

CS3N80FA9 Datasheet Preview — Preview of CS3N80FA9 PDF

Datasheet Details

Part number	CS3N80FA9
Manufacturer	HUAJING MICROELECTRONICS
File Size	827.56 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS3N80FA9-HUAJINGMICROELECTRONICS.pdf

CS3N80FA9 Product details

Description

VDSS 800 CS3N80F A9, the silicon N-channel Enhanced VDMOSFETs, ID 3 is obtained by the self-aligned planar Technology which reduce PD(TC=25℃) 30 the conduction loss, improve switching performance and RDS(ON)Typ 4.0 enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data:18nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test.

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Published: Apr 12, 2016 |