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CS6J70A4-G Silicon N-Channel Power MOSFET

CS6J70A4-G Description

Silicon N-Channel Power MOSFET CS6J70 A4-G ○R General .
CS6J70 A4-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switchin.

CS6J70A4-G Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： VDSS ID PD(TC=25℃) RDS(ON)Typ 700 V 6A 94 W 0.95 Ω Symbol Parameter VDSS ID IDMa1 VGSS EAS a2 dv/dta3 PD TJ，Tstg TL Drain-to-Source Voltage(VGS=0V) Continuous Drain Current Pulsed Drain Current Gate-to-S

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Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS
HUAJING MICROELECTRONICS CS6J70A4-G-like datasheet