HFF11N60S Datasheet - HUASHAN ELECTRONIC

N-Channel MOSFET

HFF11N60S Features

* 10.8A, 600V(See Note), RDS(on)

HFF11N60S General Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche .

HFF11N60S Datasheet (707.52 KB)

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Datasheet Details

Part number:

HFF11N60S

Manufacturer:

HUASHAN ELECTRONIC

File Size:

707.52 KB

Description:

N-channel mosfet.

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HFF11N60S N-Channel MOSFET HUASHAN ELECTRONIC

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HFF11N60S Features

HFF11N60S General Description

Datasheet Details

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