HFF11N60S Datasheet, Mosfet, HUASHAN ELECTRONIC

HFF11N60S Features

• Mosfet
• 10.8A, 600V(See Note), RDS(on) <0.75Ω@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant █ Maximu

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Part number:

HFF11N60S

Manufacturer:

HUASHAN ELECTRONIC

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707.52kb

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📄 Datasheet

Description:

N-channel mosfet. These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this adva

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HFF11N60S

HUASHAN ELECTRONIC

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