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HFF630 Datasheet - HUASHAN ELECTRONIC

HFF630 N-Channel MOSFET

Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF630 APPLICATIONSL High Voltage High-Speed Switching. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature Tj Operating Junction Temperature PD Allowable Power Dissipation Tc=25 VDSS Drain-Source Voltage VDGR Drain-Gate Voltage (RGS=1M ) VGSS Gate-Source Voltage ID Drain Current Tc=25 Drain current limited by maximumjunction temperature 5 5 ~1 5 0 150 38W 200V 500V ±30V 9.0A ELECTRICAL CHARACTERISTICS Ta=2.

HFF630 Datasheet (227.20 KB)

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Datasheet Details

Part number:

HFF630

Manufacturer:

HUASHAN ELECTRONIC

File Size:

227.20 KB

Description:

N-channel mosfet.

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HFF630 N-Channel MOSFET HUASHAN ELECTRONIC

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