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HFF640 Datasheet - HUASHAN ELECTRONIC

HFF640 N-Channel MOSFET

Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF640 APPLICATIONSL High Voltage High-Speed Switching. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature Tj Operating Junction Temperature PD Allowable Power Dissipation Tc=25 VDSS Drain-Source Voltage VDGR Drain-Gate Voltage (RGS=1M ) VGSS Gate-Source Voltage ID Drain Current Tc=25 Drain current limited by maximumjunction temperature 5 5 ~1 5 0 150 43W 200V 200V ±20V 18A ELECTRICAL CHARACTERISTICS Ta=25.

HFF640 Datasheet (228.12 KB)

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Datasheet Details

Part number:

HFF640

Manufacturer:

HUASHAN ELECTRONIC

File Size:

228.12 KB

Description:

N-channel mosfet.

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HFF640 N-Channel MOSFET HUASHAN ELECTRONIC

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