HFF640 Datasheet (HUASHAN ELECTRONIC)

HFF640, N-Channel MOSFET

Shantou Huashan Electronic Devices Co.,Ltd.

N-Channel MOSFET HFF640 APPLICATIONSL High Voltage High-Speed Switching.

ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature Tj Operating Junction Temperature PD Allowable Power Dissipation Tc=25 VDSS Drain-Source Voltage VDGR Drain-Gate Voltage (RGS=1M ) VGSS Gate-Source Voltage ID Drain Current Tc=25 Drain current limited by maximumjunction temperature 5 5 ~1 5 0 150 43W 200V 200V ±20V 18A ELECTRICAL CHARACTERISTICS Ta=25