HFF7N60 Datasheet, Transistor, HUASHAN ELECTRONIC

HFF7N60 Features

• Transistor
• 7A, 600V(See Note), RDS(on) <1.2Ω@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant █ Maximum Ra

PDF File Details

Part number:

HFF7N60

Manufacturer:

HUASHAN ELECTRONIC

File Size:

640.25kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode field effect transistor. These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this adva

TAGS

HFF7N60

HUASHAN ELECTRONIC

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