HY164XX01 Datasheet, line equivalent, HYES Optoelectronics

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Part number:

HY164XX01

Manufacturer:

HYES Optoelectronics

File Size:

186.94kb

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📄 Datasheet

Description:

16 char x 2 line. GND (0V) Power Supply Supply Voltage LCD Driving Register Select Low = Instruction, High = Data Read/Write Low = MPU to LCM, High = L

TAGS

HY164XX01

HYES Optoelectronics

📁 Related Datasheet

HY1603 - N-Channel MOSFET (HOOYI)
HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.

HY1603D - N-Channel MOSFET (HOOYI)
HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.

HY1603S - N-Channel MOSFET (HOOYI)
HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.

HY1603U - N-Channel MOSFET (HOOYI)
HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.

HY1606AP - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1606AP N-Channel Enhancement Mode MOSFET Features • • • • 60V/60A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free .

HY1606B - N-Channel MOSFET (HOOYI)
HY1606P/B N-Channel Enhancement Mode MOSFET Features • 60V/66A RDS(ON) = 10.4 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

HY1606P - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1606P/B N-Channel Enhancement Mode MOSFET Features • 60V/66A RDS(ON) = 10.4 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

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HY1607AP/M/B/MF/PS/PM Features • 68V/80A R = 6.5m(typ.) @ V =10V DS(ON) GS • 100% avalanche tested • Reliable and Rugged • Lead Free and Gre.

HY1607AB - N-Channel MOSFET (HOOYI)
HY1607AP/M/B/MF/PS/PM Features • 68V/80A R = 6.5m(typ.) @ V =10V DS(ON) GS • 100% avalanche tested • Reliable and Rugged • Lead Free and Gre.