HY162XX03 Datasheet, line equivalent, HYES Optoelectronics

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Part number:

HY162XX03

Manufacturer:

HYES Optoelectronics

File Size:

191.80kb

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📄 Datasheet

Description:

16 char x 2 line. GND (0V) Power Supply Supply Voltage LCD Driving Register Select Low = Instruction, High = Data Read/Write Low = MPU to LCM, High = L

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HY162XX03

HYES Optoelectronics

📁 Related Datasheet

HY162XX01 - 16 CHAR X 2 LINE (HYES Optoelectronics)
.. HY162XX01 16 CHAR X 2 LINE 1、EXTERNAL DIMENSION AND DISPLAY PATTERN * LED BACKLIGHT VERSION=9.0 ** LED BACKLIGHT VERSION=14.0 .

HY162XX02 - 16 CHAR X 2 LINE (HYES Optoelectronics)
.. HY162XX02 16 CHAR X 2 LINE 1、EXTERNAL DIMENSION AND DISPLAY PATTERN * LED BACKLIGHT VERSION=8.6 ** LED BACKLIGHT VERSION=13.0 .

HY1620A - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1620W/A N-Channel Enhancement Mode MOSFET Features • 200V/60 A RDS(ON) = 32 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

HY1620B - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1620P/B N-Channel Enhancement Mode MOSFET Features • 200V/60 A RDS(ON) = 32 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

HY1620P - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1620P/B N-Channel Enhancement Mode MOSFET Features • 200V/60 A RDS(ON) = 32 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

HY1620W - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1620W/A N-Channel Enhancement Mode MOSFET Features • 200V/60 A RDS(ON) = 32 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

HY1603 - N-Channel MOSFET (HOOYI)
HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.

HY1603D - N-Channel MOSFET (HOOYI)
HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.

HY1603S - N-Channel MOSFET (HOOYI)
HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.

HY1603U - N-Channel MOSFET (HOOYI)
HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.