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HY1620B

N-Channel Enhancement Mode MOSFET

HY1620B Features

* 200V/60 A RDS(ON) = 32 mΩ (typ.) @ VGS=10V

* 100% avalanche tested

* Reliable and Rugged

* Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-263-2L Applications

* Switching application

* Power Managem

HY1620B General Description

DS G TO-220FB-3L DS G TO-263-2L Applications

* Switching application

* Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S PB HY1620 HY1620 YYÿ XXXJWW G YYÿ XXXJWW G Package Code P:TO-220FB-3L Date Code YYXXX WW B:TO-263-2L Assembly.

HY1620B Datasheet (4.24 MB)

Preview of HY1620B PDF

Datasheet Details

Part number:

HY1620B

Manufacturer:

HOOYI

File Size:

4.24 MB

Description:

N-channel enhancement mode mosfet.

📁 Related Datasheet

HY1620A - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1620W/A N-Channel Enhancement Mode MOSFET Features • 200V/60 A RDS(ON) = 32 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

HY1620P - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1620P/B N-Channel Enhancement Mode MOSFET Features • 200V/60 A RDS(ON) = 32 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

HY1620W - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1620W/A N-Channel Enhancement Mode MOSFET Features • 200V/60 A RDS(ON) = 32 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

HY162XX01 - 16 CHAR X 2 LINE (HYES Optoelectronics)
.. HY162XX01 16 CHAR X 2 LINE 1、EXTERNAL DIMENSION AND DISPLAY PATTERN * LED BACKLIGHT VERSION=9.0 ** LED BACKLIGHT VERSION=14.0 .

HY162XX02 - 16 CHAR X 2 LINE (HYES Optoelectronics)
.. HY162XX02 16 CHAR X 2 LINE 1、EXTERNAL DIMENSION AND DISPLAY PATTERN * LED BACKLIGHT VERSION=8.6 ** LED BACKLIGHT VERSION=13.0 .

HY162XX03 - 16 CHAR X 2 LINE (HYES Optoelectronics)
.. HY162XX03 16 CHAR X 2 LINE 1、EXTERNAL DIMENSION AND DISPLAY PATTERN * LED BACKLIGHT VERSION=10.0 ** LED BACKLIGHT VERSION=14.3.

HY1603 - N-Channel MOSFET (HOOYI)
HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.

HY1603D - N-Channel MOSFET (HOOYI)
HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.

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HY1620B N-Channel Enhancement Mode MOSFET HOOYI

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