HY1620W
HOOYI
4.01MB
N-channel enhancement mode mosfet. S D G TO-247-3L S D G TO-3P-3L Applications
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📁 Related Datasheet
HY1620A - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY1620W/A
N-Channel Enhancement Mode MOSFET
Features
• 200V/60 A
RDS(ON) = 32 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Le.
HY1620B - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY1620P/B
N-Channel Enhancement Mode MOSFET
Features
• 200V/60 A
RDS(ON) = 32 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Le.
HY1620P - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY1620P/B
N-Channel Enhancement Mode MOSFET
Features
• 200V/60 A
RDS(ON) = 32 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Le.
HY162XX01 - 16 CHAR X 2 LINE
(HYES Optoelectronics)
..
HY162XX01
16 CHAR X 2 LINE
1、EXTERNAL DIMENSION AND DISPLAY PATTERN
* LED BACKLIGHT VERSION=9.0 ** LED BACKLIGHT VERSION=14.0
.
HY162XX02 - 16 CHAR X 2 LINE
(HYES Optoelectronics)
..
HY162XX02
16 CHAR X 2 LINE
1、EXTERNAL DIMENSION AND DISPLAY PATTERN
* LED BACKLIGHT VERSION=8.6 ** LED BACKLIGHT VERSION=13.0
.
HY162XX03 - 16 CHAR X 2 LINE
(HYES Optoelectronics)
..
HY162XX03
16 CHAR X 2 LINE
1、EXTERNAL DIMENSION AND DISPLAY PATTERN
* LED BACKLIGHT VERSION=10.0 ** LED BACKLIGHT VERSION=14.3.
HY1603 - N-Channel MOSFET
(HOOYI)
HY1603D/U/S
N-Channel Enhancement Mode MOSFET
Features
• 30V/62A,
RDS(ON)= 4.0mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Ex.
HY1603D - N-Channel MOSFET
(HOOYI)
HY1603D/U/S
N-Channel Enhancement Mode MOSFET
Features
• 30V/62A,
RDS(ON)= 4.0mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Ex.
HY1603S - N-Channel MOSFET
(HOOYI)
HY1603D/U/S
N-Channel Enhancement Mode MOSFET
Features
• 30V/62A,
RDS(ON)= 4.0mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Ex.
HY1603U - N-Channel MOSFET
(HOOYI)
HY1603D/U/S
N-Channel Enhancement Mode MOSFET
Features
• 30V/62A,
RDS(ON)= 4.0mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Ex.