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IRF822

N-Channel Power MOSFETs

IRF822 Features

* 2.2A and 2.5A, 450V and 500V

* rDS(ON) = 3.0Ω and 4.0Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literatur

IRF822 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF822 Datasheet (44.37 KB)

Preview of IRF822 PDF

Datasheet Details

Part number:

IRF822

Manufacturer:

Harris

File Size:

44.37 KB

Description:

N-channel power mosfets.

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TAGS

IRF822 N-Channel Power MOSFETs Harris

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