Datasheet4U Logo Datasheet4U.com

IRF823 Datasheet - Harris

IRF823 N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF823 Features

* 2.2A and 2.5A, 450V and 500V

* rDS(ON) = 3.0Ω and 4.0Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literatur

IRF823 Datasheet (44.37 KB)

Preview of IRF823 PDF
IRF823 Datasheet Preview Page 2 IRF823 Datasheet Preview Page 3

Datasheet Details

Part number:

IRF823

Manufacturer:

Harris

File Size:

44.37 KB

Description:

N-channel power mosfets.

📁 Related Datasheet

IRF820 N-Channel Power MOSFET (ART CHIP)

IRF820 N-Channel MOSFET Transistor (Inchange Semiconductor)

IRF820 Power MOSFET (Motorola Inc)

IRF820 N-CHANNEL MOSFET (STMicroelectronics)

IRF820 N-Channel Power MOSFET (Intersil Corporation)

IRF820 Power MOSFET (International Rectifier)

IRF820 N-Channel Power MOSFET (Fairchild Semiconductor)

IRF820 N-Channel Power MOSFETs (Harris)

TAGS

IRF823 N-Channel Power MOSFETs Harris

IRF823 Distributor