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IRF823, IRF820 N-Channel Power MOSFETs

IRF823 Description

S E M I C O N D U C T O R IRF820, IRF821, IRF822, IRF823 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power field effect transistors.

IRF823 Features

* 2.2A and 2.5A, 450V and 500V
* rDS(ON) = 3.0Ω and 4.0Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literatur

IRF823 Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405. November 1997

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRF823, IRF820. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRF823, IRF820
Manufacturer
Harris
File Size
44.37 KB
Datasheet
IRF820-Harris.pdf
Description
N-Channel Power MOSFETs
Note
This datasheet PDF includes multiple part numbers: IRF823, IRF820.
Please refer to the document for exact specifications by model.

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N-Channel Power MOSFETs Harris
Harris IRF823-like datasheet