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RFG50N06 - Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

The RFG50N06 by Harris is a Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs. Below is the official datasheet preview.

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Official preview page of the RFG50N06 Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs datasheet (Harris).

Datasheet Details

Part number RFG50N06
Manufacturer Harris
File Size 77.46 KB
Description Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
Datasheet download datasheet RFG50N06-Harris.pdf
Additional preview pages of the RFG50N06 datasheet.

RFG50N06 Product details

Description

Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE The RFG50N06, RFP50N06, RF1S50N06, and RF1S50N06SM N-Channel power MOSFETs are manufactured using the MegaFET process.This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.These transistors

Features

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