IRF512 Description
www.DataSheet4U.com Semiconductor IRF510, IRF511, IRF512, IRF513 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs Descriptio.
These are N-Channel enhancement mode silicon gate power field effect transistors.
IRF512 Features
* 4.9A, and 5.6A, 80V and 100V
* rDS(ON) = 0.54Ω and 0.74Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literat
IRF512 Applications
* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17441.
January 1998
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