IRF510 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF510 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for

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www.DataSheet4U.com Semiconductor IRF510, IRF511, IRF512, IRF513 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs Descriptio

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www.DataSheet4U.com Semiconductor IRF510, IRF511, IRF512, IRF513 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs Descriptio

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Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extende

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www.vishay.com IRF510 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs

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www.DataSheet4U.com Semiconductor IRF510, IRF511, IRF512, IRF513 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs Descriptio

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www.DataSheet4U.com PD - 95364 IRF510PbF • Lead-Free www.irf.com 1 6/10/04 IRF510PbF 2 www.irf.com IRF510PbF www.irf.com 3 IRF510PbF 4

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Data Sheet January 2002 IRF510 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transis

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www.vishay.com IRF510S, SiHF510S Vishay Siliconix Power MOSFET D D2PAK (TO-263) G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Q

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