Datasheet4U Logo Datasheet4U.com

HX3407 - P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

Note: Hxsemi lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.

Features

  • -30V/-4.5A RDS(ON)= 43mΩ(Typ. ) @ VGS=-10V RDS(ON)= 60mΩ(Typ. ) @ VGS=-4.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

📥 Download Datasheet

Datasheet preview – HX3407

Datasheet Details

Part number HX3407
Manufacturer Hexin Semiconductor
File Size 356.70 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet HX3407 Datasheet
Additional preview pages of the HX3407 datasheet.

📁 Similar Datasheet

  • HX3400 - 8MHz to 6.4GHz Phase Detector (HOLZWORTH)
  • HX3400 - P-Channel MOSFET (HXDZ)
  • HX3401 - P-Channel MOSFET (HXDZ)
  • HX3401S - P-Channel MOSFET (HXDZ)
  • HX3402S - N-Channel MOSFET (HXDZ)
  • HX3001 - Synchronous Boost DC/DC Regulator (HEXIN)
  • HX3002 - Synchronous PWM control efficiency DC / DC boost converter (HEXIN)
  • HX3199 - NPN SILICON TRANSISTOR (Huashan)
Other Datasheets by Hexin Semiconductor
  • HX3400 - N-Channel Enhancement Mode MOSFET
  • HX3242 - Step-up DC/DC Converter

Full PDF Text Transcription

Click to expand full text
HX1001 HX3407 P-Channel Enhancement Mode MOSFET Features  -30V/-4.5A RDS(ON)= 43mΩ(Typ.) @ VGS=-10V RDS(ON)= 60mΩ(Typ.) @ VGS=-4.5V  Super High Dense Cell Design  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant) Applications  Power Management in Notebook  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter Ordering and Marking Information Pin Description D G S Note: Hxsemi lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. Hxsemi lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature.
Published: |