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HI32C, HI32C_Hi PNP EPITAXIAL PLANAR TRANSISTOR

HI32C Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE9002 Issued Date : 1994.03.02 Revised Date : 2002.01.17 Page No.: 1/3 HI32C PNP EPITAXIAL PLANAR .
The HI32C is designed for use in general purpose amplifier and low speed switching applications.

HI32C Applications

* Absolute Maximum Ratings (Ta=25°C) TO-251
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C
* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 15W
* Maximum Voltages and Currents BVCBO Collector to Base Voltage -100 V BVCE

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HI32C, HI32C_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HI32C, HI32C_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
60.07 KB
Datasheet
HI32C_Hi-SincerityMocroelectronics.pdf
Description
PNP EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HI32C, HI32C_Hi.
Please refer to the document for exact specifications by model.

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PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HI32C-like datasheet