HI31C, HI31C_Hi Datasheet - Hi-Sincerity Mocroelectronics

HI31C, HI31C_Hi, NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE9001 Issued Date : 1996.02.28 Revised Date : 2002.03.04 Page No.: 1/3 HI31C NPN EPITAXIAL PLANAR .
The HI31C is designed for use in general purpose amplifier and switching applications. Maximum.

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HI31C_Hi-SincerityMocroelectronics.pdf

HI31C Datasheet Preview — This datasheet PDF includes multiple part numbers: HI31C, HI31C_Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

HI31C, HI31C_Hi

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

65.40 KB

Description:

NPN EPITAXIAL PLANAR TRANSISTOR

Note:

This datasheet PDF includes multiple part numbers: HI31C, HI31C_Hi.
Please refer to the document for exact specifications by model.

Applications

* Absolute Maximum Ratings (Ta=25°C) TO-251
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C
* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 15 W
* Maximum Voltages and Currents BVCBO Collector to Base Voltage 100 V BVCE

HI31C Distributors

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HI31C_Hi NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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