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HI31C, HI31C_Hi Datasheet - Hi-Sincerity Mocroelectronics

HI31C NPN EPITAXIAL PLANAR TRANSISTOR

The HI31C is designed for use in general purpose amplifier and switching applications. Absolute Maximum Ratings (Ta=25°C) TO-251 * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C * Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 1.

HI31C_Hi-SincerityMocroelectronics.pdf

This datasheet PDF includes multiple part numbers: HI31C, HI31C_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

HI31C, HI31C_Hi

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

65.40 KB

Description:

Npn epitaxial planar transistor.

Note:

This datasheet PDF includes multiple part numbers: HI31C, HI31C_Hi.
Please refer to the document for exact specifications by model.

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TAGS

HI31C HI31C_Hi NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

HI31C Distributor