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HI3669 Datasheet - Hi-Sincerity Mocroelectronics

HI3669 NPN EPITAXIAL PLANAR TRANSISTOR

The HI3669 is designed for using in power amplifier applications, power switching application. Absolute Maximum Ratings (TA=25°C) TO-251 * Maximum Temperatures Tstg Storage Temperature -55 ~ +150 °C Tj Junction Temperature +150 °C * Maximum Power Dissipation Total Power Dissipa.

HI3669 Datasheet (43.90 KB)

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Datasheet Details

Part number:

HI3669

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

43.90 KB

Description:

Npn epitaxial planar transistor.

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HI3669 NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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