Datasheet4U Logo Datasheet4U.com

HJ10387, HJ10387_Hi NPN EPITAXIAL PLANAR TRANSISTOR

HJ10387 Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6028 Issued Date : 1997.06.24 Revised Date : 2008.04.09 Page No.: 1/5 HJ10387 NPN EPITAXIAL PLAN.
The HJ10387 is designed for general purpose amplifier and low speed switching applications. Max.

HJ10387 Applications

* Absolute Maximum Ratings (TA=25°C) TO-252
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C
* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 20 W Total Power Dissipation (Ta=25°C)

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HJ10387, HJ10387_Hi. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
HJ10387, HJ10387_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
97.12 KB
Datasheet
HJ10387_Hi-SincerityMocroelectronics.pdf
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HJ10387, HJ10387_Hi.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

  • HJ11867 - Three-channel fluxgate signal processing IC (ETC)
  • HJ12003 - Power Divider (Signal)
  • HJ13002 - NPN Epitaxial Silicon Transistor (Hefei Hejing)
  • HJ1602A - Dot Matrix LCD (Ovation)

📌 All Tags

NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HJ10387-like datasheet