HJ10387, HJ10387_Hi NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6028 Issued Date : 1997.06.24 Revised Date : 2008.04.09 Page No.: 1/5 HJ10387 NPN EPITAXIAL PLAN.
The HJ10387 is designed for general purpose amplifier and low speed switching applications. Max.

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HJ10387 Datasheet Preview — This datasheet PDF includes multiple part numbers: HJ10387, HJ10387_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HJ10387, HJ10387_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 97.12 KB
Datasheet: HJ10387_Hi-SincerityMocroelectronics.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HJ10387, HJ10387_Hi.
Please refer to the document for exact specifications by model.

Applications

* Absolute Maximum Ratings (TA=25°C) TO-252
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C
* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 20 W Total Power Dissipation (Ta=25°C)

HJ10387 Distributors

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HJ10387_Hi NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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