HJ10387 Datasheet - Hi-Sincerity Mocroelectronics

NPN EPITAXIAL PLANAR TRANSISTOR

HJ10387 General Description

The HJ10387 is designed for general purpose amplifier and low speed switching applications. Absolute Maximum Ratings (TA=25°C) TO-252 * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C * Maximum Power Dissipation Total Power Dissipation (Tc=25.

HJ10387 Datasheet (97.12 KB)

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HJ10387

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Hi-Sincerity Mocroelectronics

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97.12 KB

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Npn epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6028 Issued Date : 1997.06.24 Revised Date : 2008.04. 09 Page No. : 1/5 HJ10387 NPN EPITAXIAL PLAN.

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HJ10387 General Description

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