HJ112

NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

HJ112 General Description

The HJ112 is designed for use in general purpose amplifier and low-speed switching applications. Absolute Maximum Ratings (TA=25°C) TO-252

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum

* Maximum Power Dissipation Total Power Dissi.

HJ112 Datasheet (104.24 KB)

HJ112 Datasheet Preview — Preview of HJ112 PDF

Datasheet Details

Part number:

HJ112

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

104.24 KB

Description:

Npn epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. HJ112 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6030 Issued Date : 1998.07.01 Revised Date : 2006.04.09 Page .

📁 Related Datasheet

HJ1109 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HJ117 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HJ11867 Three-channel fluxgate signal processing IC (ETC)

HJ10387 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HJ12003 Power Divider (Signal)

HJ122 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HJ127 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HJ13002 NPN Epitaxial Silicon Transistor (Hefei Hejing)

HJ14C NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HJ1538 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

TAGS

HJ112 NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

Image Gallery

HJ112 General Description

Datasheet Details

File Size:

Description:

HJ112 Distributor