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HJ112 Datasheet - Hi-Sincerity Mocroelectronics

HJ112 NPN EPITAXIAL PLANAR TRANSISTOR

The HJ112 is designed for use in general purpose amplifier and low-speed switching applications. Absolute Maximum Ratings (TA=25°C) TO-252 * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum * Maximum Power Dissipation Total Power Dissi.

HJ112 Datasheet (104.24 KB)

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Datasheet Details

Part number:

HJ112

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

104.24 KB

Description:

Npn epitaxial planar transistor.

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HJ112 NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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