HJ127

PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

HJ127 General Description

TO-252

* High DC current gain

* Built-in a damper diode at E-C Darlington Schematic C Absolute Maximum Ratings (TA=25°C)

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C B R1 R2 E

* Maximum Power Dissipation Total Power Dis.

HJ127 Datasheet (92.01 KB)

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HJ127

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Hi-Sincerity Mocroelectronics

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92.01 KB

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Pnp epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. HJ127 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6017 Issued Date : 1996.04.12 Revised Date : 2008.04.09 Page .

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HJ127 PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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HJ127 General Description

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