* High DC current gain
* Built-in a damper diode at E-C Absolute Maximum Ratings (TA=25°C) B R1 R2 E
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C
* Maximum Power Dissipation Total Power Dissipation (TC=25°C) 20 W
HJ122
Hi-Sincerity Mocroelectronics
95.62 KB
Npn epitaxial planar transistor.
HI-SINCERITY
MICROELECTRONICS CORP.
HJ122
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6009 Issued Date : 1996.02.03 Revised Date :2008.04.09 Page N.
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