HJ122 Datasheet - Hi-Sincerity Mocroelectronics

HJ122 NPN EPITAXIAL PLANAR TRANSISTOR

HJ122 Features

* High DC current gain

* Built-in a damper diode at E-C Absolute Maximum Ratings (TA=25°C) B R1 R2 E

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C

* Maximum Power Dissipation Total Power Dissipation (TC=25°C) 20 W

Datasheet Details

HJ122

Hi-Sincerity Mocroelectronics

95.62 KB

Npn epitaxial planar transistor.

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