Datasheet4U Logo Datasheet4U.com

HJ1109

PNP EPITAXIAL PLANAR TRANSISTOR

HJ1109 General Description



* Low frequency high voltage amplifier.

* Complementary pair with HJ1609. Absolute Maximum Ratings (Ta=25°C)

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C

* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 1.25 W .

HJ1109 Datasheet (31.23 KB)

Preview of HJ1109 PDF

Datasheet Details

Part number:

HJ1109

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

31.23 KB

Description:

Pnp epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6019-B Issued Date : 1996.04.15 Revised Date : 2000.11.01 Page No. : 1/3 HJ1109 PNP EPITAXIAL PLAN.

📁 Related Datasheet

HJ112 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HJ117 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HJ11867 Three-channel fluxgate signal processing IC (ETC)

HJ10387 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HJ12003 Power Divider (Signal)

HJ122 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HJ127 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HJ13002 NPN Epitaxial Silicon Transistor (Hefei Hejing)

HJ14C NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HJ1538 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

TAGS

HJ1109 PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

Image Gallery

HJ1109 Datasheet Preview Page 2 HJ1109 Datasheet Preview Page 3

HJ1109 Distributor