Description
HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HN200212 Issued Date : 2002.07.01 Revised Date : 2004.09.08 Page No.: 1/5 HMBT9014 NPN EPITAXIAL PL.
The HMBT9014 is designed for use in pre-amplifier of low level and low noise.
High Total Power Dissipation (PD: 225mW).
C.
Features
* High Total Power Dissipation (PD: 225mW)
* Complementary to HMBT9015
* High hFE and Good Linearity
SOT-23
Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation T
Applications
* or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp. ): 10F. ,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R. O. C. Tel:
