* High Total Power Dissipation (PD: 225mW)
* Complementary to HMBT9015
* High hFE and Good Linearity SOT-23 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation T
HMBT9014
Hi-Sincerity Mocroelectronics
76.66 KB
Npn epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HN200212 Issued Date : 2002.07.01 Revised Date : 2004.09.08 Page No. : 1/5 HMBT9014 NPN EPITAXIAL PL.
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