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HMBT9014, HMBT9014_Hi NPN EPITAXIAL PLANAR TRANSISTOR

HMBT9014 Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HN200212 Issued Date : 2002.07.01 Revised Date : 2004.09.08 Page No.: 1/5 HMBT9014 NPN EPITAXIAL PL.
The HMBT9014 is designed for use in pre-amplifier of low level and low noise. High Total Power Dissipation (PD: 225mW). C.

HMBT9014 Features

* High Total Power Dissipation (PD: 225mW)
* Complementary to HMBT9015
* High hFE and Good Linearity SOT-23 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation T

HMBT9014 Applications

* or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp. ): 10F. ,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R. O. C. Tel:

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HMBT9014, HMBT9014_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HMBT9014, HMBT9014_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
76.66 KB
Datasheet
HMBT9014_Hi-SincerityMocroelectronics.pdf
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HMBT9014, HMBT9014_Hi.
Please refer to the document for exact specifications by model.

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NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HMBT9014-like datasheet