HSD468, HSD468_Hi NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

HSD468 Description

HI-SINCERITY MICROELECTRONICS CORP.HSD468 NPN Epitaxial Planar Transistor Spec.No.: HE6535 Issued Date : 1992.11.25 Revised Date : 2006.07.27 Page.
The HSD468 is designed for general purpose low frequency power amplifier applications. Maximum Temperatur.

HSD468 Applications

* TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 900 mW
* Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage

📥 Download Datasheet

HSD468 Datasheet Preview — This datasheet PDF includes multiple part numbers: HSD468, HSD468_Hi. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: HSD468, HSD468_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 53.28 KB
Datasheet: HSD468_Hi-SincerityMocroelectronics.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HSD468, HSD468_Hi.
Please refer to the document for exact specifications by model.

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NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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