2SC5480 - Silicon NPN Triple Diffused Planar Transistor

Hitachi Semiconductor

Datasheet Details

Part number	2SC5480
Manufacturer	Hitachi Semiconductor
File Size	62.25 KB
Description	Silicon NPN Triple Diffused Planar Transistor
Datasheet	2SC5480_HitachiSemiconductor.pdf

High breakdown voltage VCES = 1500 V.
Isolated package TO.
3PFM.
Built-in damper diode Outline TO.
3PFM C 2 1 B 3 E 1 2 3 1. Base 2. Collector 3. Emitter www. DataSheet4U. com www. DataSheet4U. com www. DataSheet4U. com 2SC5480 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Collector to emitte.

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Published: Apr 8, 2006 |