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2SJ280 - SILICON P-CHANNEL MOSFET

Download the 2SJ280 datasheet PDF. This datasheet also covers the 2SJ290 variant, as both devices belong to the same silicon p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

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Features

  • Low on.
  • resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source.
  • Suitable for Switching regulator, DC.
  • DC converter.
  • Avalanche Ratings 1 1 2, 4 2 3 2 3 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body.
  • drain diode reverse drain current Avalanch.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SJ290_HitachiSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com 2SJ280 L , 2SJ280 S Silicon P Channel MOS FET Application LDPAK High speed power switching 4 4 Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC converter • Avalanche Ratings 1 1 2, 4 2 3 2 3 1 1. Gate 2. Drain 3. Source 4.
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