Part number:
2SJ399
Manufacturer:
Hitachi Semiconductor
File Size:
36.97 KB
Description:
P-channel mosfet.
* Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch. Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SJ399 Absolute Maximum Ratings (Ta = 25°C) Item Drai
2SJ399
Hitachi Semiconductor
36.97 KB
P-channel mosfet.
📁 Related Datasheet
2SJ399 - Silicon P-Channel MOSFET
(Renesas)
2SJ399
Silicon P-Channel MOS FET
REJ03G0193-0200Z (Previous ADE-208-267 (Z) ) Rev.2.00 Apr.05.2004
Application
Low frequency power switching
Feature.
2SJ302 - P-Channel MOSFET
(NEC)
.
2SJ302-Z - SWITCHING P-CHANNEL POWER MOSFET
(NEC)
.
2SJ302-ZJ - P-Channel MOSFET
(Kexin)
SMD Type
P-Channel MOSFET 2SJ302-ZJ
■ Features
● VDS (V) =-60V ● ID =-16 A ● RDS(ON) ＜ 100mΩ (VGS =-10V) ● RDS(ON) ＜ 240mΩ (VGS =-4V)
MOSFET
■ Abs.
2SJ303 - P-Channel MOSFET
(NEC)
.
2SJ304 - P-Channel MOSFET
(Toshiba Semiconductor)
2SJ304
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV)
2SJ304
DC−DC Converter, Relay Drive and Motor Drive Applications
Unit.
2SJ305 - P-Channel MOSFET
(Toshiba Semiconductor)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ305
High Speed Switching Applications Analog Applications
• High input impedance • Low g.
2SJ3053DV - P-Channel MOSFET
(Kexin)
SMD Type
MOSFET
P Channel MOSFET 2SJ3053DV
■ Features
● Surface Mount Package ● Super High Density Cell Design
for Extremely Low RDS(on) ● Exceptio.
