2SJ586 - Silicon P Channel MOS FET High Speed Switching

Name: 2SJ586
SKU: 2SJ586-202094

Hitachi Semiconductor

The 2SJ586 by Hitachi Semiconductor is a Silicon P Channel MOS FET High Speed Switching. Below is the official datasheet preview.

Datasheet Details

Part number	2SJ586
Manufacturer	Hitachi Semiconductor
File Size	41.39 KB
Description	Silicon P Channel MOS FET High Speed Switching
Datasheet	2SJ586_HitachiSemiconductor.pdf
Additional preview pages of the 2SJ586 datasheet.

Low on-resistance R DS = 4.1 Ω typ. (VGS = -4 V , I D = -50 mA) R DS = 6.0 Ω typ. (VGS = -2.5 V , ID = -50 mA).
2.5 V gate drive device.
Small package (CMPAK) Outline CMPAK 3 1 2 D 3 2 G 1. Source 2. Gate 3. Drain S 1 2SJ586 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS V.

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Published: Mar 30, 2005 |