Datasheet4U Logo Datasheet4U.com

2SJ586 Datasheet - Hitachi Semiconductor

2SJ586 Silicon P Channel MOS FET High Speed Switching

2SJ586 Features

* Low on-resistance R DS = 4.1 Ω typ. (VGS = -4 V , I D = -50 mA) R DS = 6.0 Ω typ. (VGS = -2.5 V , ID = -50 mA)

* 2.5 V gate drive device.

* Small package (CMPAK) Outline CMPAK 3 1 2 D 3 2 G 1. Source 2. Gate 3. Drain S 1 2SJ586 Absolute Maximum Ratings (Ta = 25°C) Ite

2SJ586_HitachiSemiconductor.pdf

Preview of 2SJ586 PDF
2SJ586 Datasheet Preview Page 2 2SJ586 Datasheet Preview Page 3

Datasheet Details

Part number:

2SJ586

Manufacturer:

Hitachi Semiconductor

File Size:

41.39 KB

Description:

Silicon p channel mos fet high speed switching.

2SJ586 Distributor

📁 Related Datasheet

2SJ580 Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)

2SJ583LS Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)

2SJ584LS Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)

2SJ585LS Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)

2SJ587 Silicon P Channel MOS FET High Speed Switching (Hitachi Semiconductor)

2SJ588 Silicon P Channel MOS FET High Speed Switching (Hitachi Semiconductor)

2SJ589LS DC / DC Converter Applications (Sanyo Semicon Device)

2SJ50 P-Channel MOSFET (Hitachi Semiconductor)

TAGS

2SJ586 2SJ586 Silicon Channel MOS FET High Speed Switching Hitachi Semiconductor