2SJ588 Datasheet, Switching, Hitachi Semiconductor

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2SJ588

Hitachi Semiconductor

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Silicon p channel mos fet high speed switching.

Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , I D = -50 mA)
4 V gate drive device. Outline SPAK D 3 12 3 2 G 1

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