Part number:
2SJ588
Manufacturer:
Hitachi Semiconductor
File Size:
26.14 KB
Description:
Silicon p channel mos fet high speed switching.
* Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , I D = -50 mA)
* 4 V gate drive device. Outline SPAK D 3 12 3 2 G 1. Source 2. Drain 3. Gate S 1 2SJ588 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to so
2SJ588
Hitachi Semiconductor
26.14 KB
Silicon p channel mos fet high speed switching.
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