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2SJ588 Silicon P Channel MOS FET High Speed Switching

2SJ588 Description

2SJ588 Silicon P Channel MOS FET High Speed Switching ADE-208-802 (Z) 1st.Edition.June 1999 .

2SJ588 Features

* Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , I D = -50 mA)
* 4 V gate drive device. Outline SPAK D 3 12 3 2 G 1. Source 2. Drain 3. Gate S 1 2SJ588 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to so

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Datasheet Details

Part number
2SJ588
Manufacturer
Hitachi Semiconductor
File Size
26.14 KB
Datasheet
2SJ588_HitachiSemiconductor.pdf
Description
Silicon P Channel MOS FET High Speed Switching

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Silicon Channel MOS FET High Speed Switching Hitachi Semiconductor
Hitachi Semiconductor 2SJ588-like datasheet