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2SJ587 Silicon P Channel MOS FET High Speed Switching

2SJ587 Description

2SJ587 Silicon P Channel MOS FET High Speed Switching ADE-208-801 (Z) 1st.Edition.June 1999 .

2SJ587 Features

* Low on-resistance R DS = 8.5 Ω typ. (VGS = -4 V , I D = -25 mA) R DS = 15 typ. (VGS = -2.5 V , ID = -10 mA)
* 2.5 V gate drive device.
* Small package (SMPAK) Outline SMPAK 3 1 2 D 3 2 G 1. Source 2. Gate 3. Drain S 1 2SJ587 Absolute Maximum Ratings (Ta = 25°C) Item Dr

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Datasheet Details

Part number
2SJ587
Manufacturer
Hitachi Semiconductor
File Size
39.76 KB
Datasheet
2SJ587_HitachiSemiconductor.pdf
Description
Silicon P Channel MOS FET High Speed Switching

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Silicon Channel MOS FET High Speed Switching Hitachi Semiconductor
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