2SJ587 Datasheet, Switching, Hitachi Semiconductor

2SJ587 Features

• Switching
• Low on-resistance R DS = 8.5 Ω typ. (VGS = -4 V , I D = -25 mA) R DS = 15 typ. (VGS = -2.5 V , ID = -10 mA)
• 2.5 V gate drive device.
• Small package (SMPAK)

PDF File Details

Part number:

2SJ587

Manufacturer:

Hitachi Semiconductor

File Size:

39.76kb

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📄 Datasheet

Description:

Silicon p channel mos fet high speed switching.

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2SJ587

Hitachi Semiconductor

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