2SJ587 Silicon P Channel MOS FET High Speed Switching

Hitachi Semiconductor

Description

2SJ587 Silicon P Channel MOS FET High Speed Switching ADE-208-801 (Z) 1st.Edition.June 1999 .

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Datasheet Specifications

Part number: 2SJ587
Manufacturer: Hitachi Semiconductor
File Size: 39.76 KB
Datasheet: 2SJ587_HitachiSemiconductor.pdf
Description: Silicon P Channel MOS FET High Speed Switching

Features

* Low on-resistance R DS = 8.5 Ω typ. (VGS = -4 V , I D = -25 mA) R DS = 15 typ. (VGS = -2.5 V , ID = -10 mA)
* 2.5 V gate drive device.
* Small package (SMPAK) Outline SMPAK 3 1 2 D 3 2 G 1. Source 2. Gate 3. Drain S 1 2SJ587 Absolute Maximum Ratings (Ta = 25°C) Item Dr

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2SJ587 Silicon Channel MOS FET High Speed Switching Hitachi Semiconductor

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