2SJ587 - Silicon P Channel MOS FET High Speed Switching

Name: 2SJ587
SKU: 2SJ587-202095

Hitachi Semiconductor

The 2SJ587 by Hitachi Semiconductor is a Silicon P Channel MOS FET High Speed Switching. Below is the official datasheet preview.

Datasheet Details

Part number	2SJ587
Manufacturer	Hitachi Semiconductor
File Size	39.76 KB
Description	Silicon P Channel MOS FET High Speed Switching
Datasheet	2SJ587_HitachiSemiconductor.pdf
Additional preview pages of the 2SJ587 datasheet.

Low on-resistance R DS = 8.5 Ω typ. (VGS = -4 V , I D = -25 mA) R DS = 15 typ. (VGS = -2.5 V , ID = -10 mA).
2.5 V gate drive device.
Small package (SMPAK) Outline SMPAK 3 1 2 D 3 2 G 1. Source 2. Gate 3. Drain S 1 2SJ587 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS.

📁 2SJ587 Similar Datasheet

Other Datasheets by Hitachi Semiconductor

Published: Mar 30, 2005 |