Part number:
2SJ587
Manufacturer:
Hitachi Semiconductor
File Size:
39.76 KB
Description:
Silicon p channel mos fet high speed switching.
* Low on-resistance R DS = 8.5 Ω typ. (VGS = -4 V , I D = -25 mA) R DS = 15 typ. (VGS = -2.5 V , ID = -10 mA)
* 2.5 V gate drive device.
* Small package (SMPAK) Outline SMPAK 3 1 2 D 3 2 G 1. Source 2. Gate 3. Drain S 1 2SJ587 Absolute Maximum Ratings (Ta = 25°C) Item Dr
2SJ587
Hitachi Semiconductor
39.76 KB
Silicon p channel mos fet high speed switching.
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This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its R.
