2SK3159 Silicon N-Channel MOSFET

Hitachi Semiconductor

Description

2SK3159 Silicon N Channel MOS FET High Speed Power Switching ADE-208-774 (Z) Target Specification 1st.Edition February 1999 .

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Datasheet Specifications

Part number: 2SK3159
Manufacturer: Hitachi Semiconductor
File Size: 27.24 KB
Datasheet: 2SK3159_HitachiSemiconductor.pdf
Description: Silicon N-Channel MOSFET

Features

* Low on-resistance R DS = 23 mΩ typ.
* High speed switching
* 4 V gate drive device can be driven from 5 V source Outline TO
* 3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK3159 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to s

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2SK3159 Silicon N-Channel MOSFET Hitachi Semiconductor

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