2SK3163 Datasheet - Hitachi Semiconductor

2SK3163, N-Channel MOSFET

2SK3163 Silicon N Channel MOS FET High Speed Power Switching ADE-208-736A (Z) 2nd Edition February 1999 .

Features

* Low on-resistance R DS(on) = 6 mΩ typ.
* Low drive current
* 4 V gate drive device can be driven from 5 V source Outline TO
* 3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK3163 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to s

2SK3163_HitachiSemiconductor.pdf