Low on-resistance R DS = 2.8 Ω typ. (at VGS = 4 V , ID = 25 mA) R DS = 4.8 Ω typ. (at VGS = 2.5 V , I D = 10 mA).
2.5 V gate drive device.
Small package (SMPAK)
Outline
SMPAK
3 1 2 D
G
1. Source 2. Gate 3. Drain
S
2SK3349
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS I.