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4AK21

Silicon N-Channel Power MOS FET Array

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part Nexperia BSS84AK,215 MOSFET P-CH 50V 180MA TO236AB DigiKey 420087 1000 units
$0.05

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Preview of 4AK21 Datasheet

Datasheet Details

Part number:

4AK21

Manufacturer:

Hitachi Semiconductor

File Size:

36.93 KB

Description:

Silicon n-channel power mos fet array.
4AK21 Silicon N-Channel Power MOS FET Array Application High speed power switching Features * Low .
on-resistance R DS(on) 0.09 , VGS = 10 V, I D = 4 A R DS(on) 0.12 , VGS = 4 V, I D = 4 A * Capable o.

✔ 4AK21 Features

📁 Related Datasheet

4AK20 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK20 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2..

4AK22 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK22 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5.

4AK23 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
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4AK25 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
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4AK26 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK26 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.06 , VGS = 10 V, I D = .

4AK27 - Silicon N Channel MOS FET High Speed Power Switching (Hitachi Semiconductor)
4AK27 Silicon N Channel MOS FET High Speed Power Switching ADE-208-728 (Z) 1st. Edition January 1999 Features • Low on-resistance R DS(on) ≤ 0.15Ω, V.

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4AK21 Silicon N-Channel Power MOS FET Array Hitachi Semiconductor

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4AK21 Distributor

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