4AK22

Silicon N-Channel Power MOS FET Array

Hitachi Semiconductor

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Download Datasheet (36.97 KB)

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Datasheet Details

Part number:

4AK22

Manufacturer:

Hitachi Semiconductor

File Size:

36.97 KB

Description:

Silicon n-channel power mos fet array.
4AK22 Silicon N-Channel Power MOS FET Array Application High speed power switching Features * Low .
on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5 A R DS(on) 0.55 , VGS = 4 V, I D = 1.5 A * Capabl.

✔ 4AK22 Features

Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5 A R DS(on) 0.55 , VGS = 4 V, I D = 1.5 A
Capable of 4 V gate drive
Low drive current
High speed switching

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4AK22 Silicon N-Channel Power MOS FET Array Hitachi Semiconductor

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