4AK22 Silicon N-Channel Power MOS FET Array

Hitachi Semiconductor

Description

4AK22 Silicon N-Channel Power MOS FET Array Application High speed power switching .

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Datasheet Specifications

Part number: 4AK22
Manufacturer: Hitachi Semiconductor
File Size: 36.97 KB
Datasheet: 4AK22_HitachiSemiconductor.pdf
Description: Silicon N-Channel Power MOS FET Array

Features

* Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5 A R DS(on) 0.55 , VGS = 4 V, I D = 1.5 A
* Capable of 4 V gate drive
* Low drive current
* High speed switching
* High density mounting
* Suitable for motor driver, solenoid driver and lamp drive

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4AK22 Silicon N-Channel Power MOS FET Array Hitachi Semiconductor

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