4AK27
Hitachi Semiconductor
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Silicon n channel mos fet high speed power switching.
4AK27
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-728 (Z) 1st. Edition January 199.
9 Features
* Low on-resistance R DS(on) ≤ 0.15Ω, VGS = 10V, ID = 3.0A * 4V gate drive devices. * Hig.
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