4AK27 Silicon N Channel MOS FET High Speed Power Switching

Hitachi Semiconductor

4AK27 Description

4AK27 Silicon N Channel MOS FET High Speed Power Switching ADE-208-728 (Z) 1st.Edition January 1999 .

4AK27 Features

* Low on-resistance R DS(on) ≤ 0.15Ω, VGS = 10V, ID = 3.0A
* 4V gate drive devices.
* High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1 S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain 4AK27 Absolute Maximum Ratings (Ta =

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Datasheet Details

Part number: 4AK27
Manufacturer: Hitachi Semiconductor
File Size: 53.04 KB
Datasheet: 4AK27_HitachiSemiconductor.pdf
Description: Silicon N Channel MOS FET High Speed Power Switching

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Silicon Channel MOS FET High Speed Power Switching Hitachi Semiconductor

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