4AK27 Datasheet, Switching, Hitachi Semiconductor

4AK27 Features

  • Switching
  • Low on-resistance R DS(on) ≤ 0.15Ω, VGS = 10V, ID = 3.0A
  • 4V gate drive devices.
  • High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 1

PDF File Details

Part number:

4AK27

Manufacturer:

Hitachi Semiconductor

File Size:

53.04kb

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📄 Datasheet

Description:

Silicon n channel mos fet high speed power switching.

Datasheet Preview: 4AK27 📥 Download PDF (53.04kb)
Page 2 of 4AK27 Page 3 of 4AK27

TAGS

4AK27
Silicon
Channel
MOS
FET
High
Speed
Power
Switching
Hitachi Semiconductor

📁 Related Datasheet

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4AK23 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2..

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4AK26 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.06 , VGS = 10 V, I D = .

4AK15 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK15 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.07 , VGS = 10 V, I D = .

4AK16 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK16 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.18 , VGS = 10 V, I D = .

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4AK17 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.045 , VGS = 10 V, I D =.

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