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4AK25
Hitachi Semiconductor
39.87 KB
Silicon n-channel power mos fet array.
4AK25
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
* Low .
on-resistance R DS(on) 0.45 , VGS = 10 V, I D = 1 A * Low drive current * High speed switching * Hig.
📁 Related Datasheet
4AK20 - Silicon N-Channel Power MOS FET Array
(Hitachi Semiconductor)
4AK20
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2..
4AK21 - Silicon N-Channel Power MOS FET Array
(Hitachi Semiconductor)
4AK21
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(on) 0.09 , VGS = 10 V, I D = 4 .
4AK22 - Silicon N-Channel Power MOS FET Array
(Hitachi Semiconductor)
4AK22
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5.
4AK23 - Silicon N-Channel Power MOS FET Array
(Hitachi Semiconductor)
4AK23
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2..
4AK26 - Silicon N-Channel Power MOS FET Array
(Hitachi Semiconductor)
4AK26
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(on) ≤ 0.06 , VGS = 10 V, I D = .
4AK27 - Silicon N Channel MOS FET High Speed Power Switching
(Hitachi Semiconductor)
4AK27
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-728 (Z) 1st. Edition January 1999 Features
• Low on-resistance R DS(on) ≤ 0.15Ω, V.
