4AK25 Silicon N-Channel Power MOS FET Array

Hitachi Semiconductor

4AK25 Description

4AK25 Silicon N-Channel Power MOS FET Array Application High speed power switching .

4AK25 Features

* Low on-resistance R DS(on) 0.45 , VGS = 10 V, I D = 1 A
* Low drive current
* High speed switching
* High density mounting Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain 4AK25 Absolut

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Datasheet Details

Part number: 4AK25
Manufacturer: Hitachi Semiconductor
File Size: 39.87 KB
Datasheet: 4AK25_HitachiSemiconductor.pdf
Description: Silicon N-Channel Power MOS FET Array

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Silicon N-Channel Power MOS FET Array Hitachi Semiconductor

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