4AK25 Datasheet, Array, Hitachi Semiconductor

PDF File Details

Part number:

4AK25

Manufacturer:

Hitachi Semiconductor

File Size:

39.87kb

Download:

📄 Datasheet

Description:

Silicon n-channel power mos fet array.

TAGS

📁 Related Datasheet

4AK20 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK20 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2..

4AK21 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK21 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.09 , VGS = 10 V, I D = 4 .

4AK22 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK22 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5.

4AK23 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK23 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2..

4AK26 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK26 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.06 , VGS = 10 V, I D = .

4AK27 - Silicon N Channel MOS FET High Speed Power Switching (Hitachi Semiconductor)
4AK27 Silicon N Channel MOS FET High Speed Power Switching ADE-208-728 (Z) 1st. Edition January 1999 Features • Low on-resistance R DS(on) ≤ 0.15Ω, V.

4AK15 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK15 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.07 , VGS = 10 V, I D = .

4AK16 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK16 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.18 , VGS = 10 V, I D = .

4AK17 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK17 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.045 , VGS = 10 V, I D =.

4AK18 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK18 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.38 , VGS = 10 V, I D = .