Part number:
4AK23
Manufacturer:
Hitachi Semiconductor
File Size:
40.08 KB
Description:
Silicon n-channel power mos fet array
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Nanmac | A4A-K-2-3-PK | SITCK ON T/C K,72" L,10/PACK | DigiKey | 0 | 100 units |
$281.2
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4AK23
Hitachi Semiconductor
40.08 KB
Silicon n-channel power mos fet array
* Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A
* Low drive current
* High speed switching
* High density mounting
* Suitable for H-bridged motor driver Outline SP-12TA 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 12 3 4 5 6 7 8 9 10 1112
📁 Related Datasheet
4AK20 - Silicon N-Channel Power MOS FET Array
(Hitachi Semiconductor)
4AK20
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2..
4AK21 - Silicon N-Channel Power MOS FET Array
(Hitachi Semiconductor)
4AK21
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(on) 0.09 , VGS = 10 V, I D = 4 .
4AK22 - Silicon N-Channel Power MOS FET Array
(Hitachi Semiconductor)
4AK22
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5.
4AK25 - Silicon N-Channel Power MOS FET Array
(Hitachi Semiconductor)
4AK25
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(on) 0.45 , VGS = 10 V, I D = 1 .
4AK26 - Silicon N-Channel Power MOS FET Array
(Hitachi Semiconductor)
4AK26
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(on) ≤ 0.06 , VGS = 10 V, I D = .
4AK27 - Silicon N Channel MOS FET High Speed Power Switching
(Hitachi Semiconductor)
4AK27
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-728 (Z) 1st. Edition January 1999 Features
• Low on-resistance R DS(on) ≤ 0.15Ω, V.
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