4AK23 Datasheet, Array, Hitachi Semiconductor

4AK23 Features

  • Array
  • Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A
  • Low drive current
  • High speed switching
  • High density mounting
  • Suitable for H-b

PDF File Details

Part number:

4AK23

Manufacturer:

Hitachi Semiconductor

File Size:

40.08kb

Download:

📄 Datasheet

Description:

Silicon n-channel power mos fet array.

Datasheet Preview: 4AK23 📥 Download PDF (40.08kb)
Page 2 of 4AK23 Page 3 of 4AK23

TAGS

4AK23
Silicon
N-Channel
Power
MOS
FET
Array
Hitachi Semiconductor

📁 Related Datasheet

4AK20 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK20 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2..

4AK21 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK21 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.09 , VGS = 10 V, I D = 4 .

4AK22 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK22 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5.

4AK25 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK25 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.45 , VGS = 10 V, I D = 1 .

4AK26 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK26 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.06 , VGS = 10 V, I D = .

4AK27 - Silicon N Channel MOS FET High Speed Power Switching (Hitachi Semiconductor)
4AK27 Silicon N Channel MOS FET High Speed Power Switching ADE-208-728 (Z) 1st. Edition January 1999 Features • Low on-resistance R DS(on) ≤ 0.15Ω, V.

4AK15 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK15 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.07 , VGS = 10 V, I D = .

4AK16 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK16 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.18 , VGS = 10 V, I D = .

4AK17 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK17 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.045 , VGS = 10 V, I D =.

4AK18 - Silicon N-Channel Power MOS FET Array (Hitachi Semiconductor)
4AK18 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.38 , VGS = 10 V, I D = .

Stock and price

part
Nanmac
SITCK ON T/C K,72" L,10/PACK
DigiKey
A4A-K-2-3-PK
0 In Stock
Qty : 100 units
Unit Price : $281.2
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