HAT1024R, Renesas
HAT1024R
Silicon P Channel Power MOS FET High Speed Power Switching
Features
• Low on-resistance • Capable of 4 V gate drive • Low drive current • Hi.
HAT1020R, Hitachi Semiconductor
HAT1020R
Silicon P Channel Power MOS FET High Speed Power Switching
ADE-208-435 H (Z) 9th. Edition February 1999 Features
• • • • Low on-resistance C.
HAT1020R, Renesas
HAT1020R
Silicon P Channel Power MOS FET High Speed Power Switching
Features
• Low on-resistance • Capable of 4 V gate drive • Low drive current • Hi.
HAT1021R, Hitachi Semiconductor
HAT1021R
Silicon P Channel Power MOS FET High Speed Power Switching
ADE-208-475 D (Z) 5th. Edition February 1999 Features
• • • • Low on-resistance C.
HAT1021R, Renesas
HAT1021R
Silicon P Channel Power MOS FET High Speed Power Switching
Features
• Low on-resistance • Capable of 2.5 V gate drive • Low drive current • .
HAT1023R, Hitachi Semiconductor
HAT1023R
Silicon P Channel Power MOS FET High Speed Power Switching
ADE-208-436 G (Z) 8th. Edition June 1997 Features
• • • • Low on-resistance Capab.
HAT1023R, Renesas
HAT1023R
Silicon P Channel Power MOS FET High Speed Power Switching
Features
• Low on-resistance • Capable of 2.5 V gate drive • Low drive current • .
HAT1025R, Renesas
HAT1025R
Silicon P Channel Power MOS FET High Speed Power Switching
Features
• Low on-resistance • Capable of 2.5 V gate drive • Low drive current • .