K1336 - Silicon N-Channel MOS FET

Hitachi Semiconductor

Datasheet Details

Low on-resistance.
High speed switching.
Low drive current.
4 V gate drive device  Can be driven from 5 V source.
Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-92 D 321 1. Source G 2. Drain 3. Gate S 2SK1336 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperatur.

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Published: Nov 18, 2014 |