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PF0210 - MOS FET Power Amplifier Module for ADC Mobile Phone

Hitachi Semiconductor

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Datasheet Details

Part number	PF0210
Manufacturer	Hitachi Semiconductor
File Size	47.89 KB
Description	MOS FET Power Amplifier Module for ADC Mobile Phone
Datasheet	PF0210_HitachiSemiconductor.pdf

PF0210 Product details

Features

High efficiency: 34% Typ for CW 30% Typ for π/4-DQPSK.
Low input power: 0 dBm ave. Typ for π /4-DQPSK.
Simple bias circuit.
High speed switching: 8 µs Typ Pin Arrangement.
RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND PF0210 Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout G GND Z1 C1 FB1 C3 FB2 C2 Z2 Pin VAPC VDD Pout C1 = C2 = 0.01 µF (Ceramic chip capacitor) C3 = 330 µF (Aluminum Electrolyt.

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Published: Mar 22, 2005 |